Gate-on-Drain Overlapped L-Shaped Channel Tunnel FET as Label-Free Biosensor

نویسندگان

چکیده

In this work gate-on-drain L-shaped channel Tunnel FET is proposed to detect various biomolecules through label-free bio-sensing detection technique. Biomolecules can be detected in the structure modulation of ambipolar current between and drain. Modulation performed by extending gate over drain order create a overlap (cavity) etching specific portion gate. Trapped within cavity gets immobilized. Immobilized change tunneling width, thus changing ambiploar leakage current. Drain doping length was fine-tuned achieve better sensitivity terms knee voltage shift with without presence biomolecules. A maximum 3.8 × 107 achieved for 5 1019 donors/cm3 60 nm. high value each when ranged from 40 nm 50 Effect differently charged on has also structured.

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ژورنال

عنوان ژورنال: Silicon

سال: 2021

ISSN: ['1876-9918', '1876-990X']

DOI: https://doi.org/10.1007/s12633-021-01285-z